《普适弛豫定律》是作者所著《固体中的介电弛豫》一书的姊妹篇，其内容是前作的延续和深化，被电介质领域的许多研究者奉为经典。作者在对普适介电弛豫进行系统描述的基础上，将其概念外推到其他传统电介质研究不涉及的弛豫过程中。书中介绍了“普适性”的含义、“平坦”的介电响应和低频介电弥散现象，讨论了半导体中的介电响应，以及发光、化学反应和力学弛豫等非介电过程的弛豫现象，并从理论角度对上述实验现象进行了解释。《普适弛豫定律》可作为物理、电子、材料、电气等相关专业的教师、研究生和科研人员的参考书。

DIELECTRICS AND INSULATORSThe use of electrical insulation is as old as the science and technologyof electrical phenomena; it goes back at least a century and a half,while the recognition of specifically electrostatic manifestations ofelectrification goes back to antiquity. Systematic investigations ofdielectric properties may be traced back to the 1870's.The accumulated experimental and theoretical material is vast andfrom an early stage on it was possible to discern two essentiallycomplementary approaches to this wide-ranging subject- the studyand development of insulators and of dielectrics. In this classifi-cation, insulators are materials used to prevent the flow of currentwhere it is not desired, especially in the context of electrical andelectronic engineering, and the principal interest in them lies inachieving the lowest possible electrical conduction coupled with themaximum resistance to destructive breakdown in high electric fields.Other factors such as long life, low cost, chemical inertness and the ability to withstand elevated temperatures may be added to the long list of technical specifications which must be met by modern insulating materials working sometimes under extreme external stresses. It is understandable that engineers and materials scientists searching for insulating materials suitable for specific applications were less concerned with the detailed physical mechanisms gov- erning the behaviour of these materials, provided that their char- acterisation in terms of clearly defined parameters could be achieved reliably and simply. This order of priorities remains true to this day and the chief emphasis in electrical insulation science falls on the synthesis of materials and their characterisation. By contrast with the insulation aspect, dielectric phenomena are at once more general and more fundamental - after all, insulators are dielectrics - and are concerned more intimately with the micro- scopic mechanisms of dielectric polarisation and in
…… Fifty years ago, I was sitting in a class at Jiaotong University inShanghai, China taking a course called " DIELECTRICPHYSICS" lectured by the late Professor Chen Jidan. I was oneof the thirty students sitting in his class taking the course. Thiswas the first time DIELECTRIC study was introduced toChinese Universities. Since then, dielectric study became one ofthe major concerns of the science and technology community ofChina in developing its electrical and electronic engineering.Fifty years past, thousands of students, graduate students,professors, scientists and engineers have been engaged in thestudies and applications of dielectrics in this country. In the pastfifty years, the Xi'an Jiaotong University, Shanghai JiaotongUniversity, Electronic Science and Technological University,Shandong University, Zhongshan University, SichuanUniversity, Nanjing University, Tongji University and theShanghai Institute of Ceramics, the Beijing Institute of Physicsof the Chinese Academy of Sciences were heavily involved indielectric studies and gave their various contributions to thedevelopment of dielectric study in China. Now, China isprobably one of the most important countries in dielectric studiesamong the list of the ex Soviet Union and the United Kingdom.Late Professor Chen was the pioneer and founder ofDIELECTRIC studies in China. The staidness, sureness andsolemnness of his academic attitude are the invaluable treasureof the Chinese dielectric community. I would like to take the chance of writing this preface to pay my sincere respect to the late Professor Chen.

Preface
Acknowledgements
Useful Physical Constants
Chapter 1 THE MEANING OF UNIVERSALITY
1.1 The last twelve years
1.2 Basic definitions
1.3 Empirical response functions
1.4 Calculation of total polarisation
1.5 The nature of universality
1.6 Negative capacitance
1.7 Recovery of field on open-circuit Basic equations:
1.8 Energy loss in the time domain
1.9 Concluding comments
Appendix 1.1 Integration in Logarithmic Coordinates
Appendix 1.2 Values of n and cot(nπ/2)
References to chapter 1

Chapter 2 DIELECTTRIC RESPONSE OF SEMICONDUCTORS
2.1 Delayed electronic transitions
2.2 A simple barrier model
2.3 Response of Schottky diodes
Adventitious barriers on semi-insulating material
2.5 Response of p-n junctions
High-purity p-n junctions
Junctions with deep levels
Heavily doped Zener diodes
Conclusions regarding space charge region responses
2.5 Junction diffusion capacitance
a) Low-frequency response
b) High-frequency response
2.6 Volume trapping-detrapping
2.7 Hopping conduction
Electronic processes
Semi-insulating GaAs
Ionic Transport
2.8 Concluding comments
References to Chapter 2

Chapter 3 LUMINESCENCE AND PHOTOCONDUCTIVITY
3.1 The relevance of the subject
3.2 Idealised light emission rates
3.3 Analytical formulation
The limit of rapid trapping
3.4 Review of luminescence data
Exponential decays
Simple power law decays
More complex behaviours
3.5 Conclusions from luminescence
3.6 Photoconductivity in the F-D
Principles of photoconductive behaviour
Analytical formulation
3.7 Conclusions
References to Chapter 3

Chapter 4 "FLAS" DIELECTRIC RESPONSE
Chapter 5 LOW-FREQUENCY DISPERSION
Chapter 6 DC AND AC CONDUCTIVITY
Chapter 7 CHEMICAL REACTION DINETICS
Chapter 8 THERMALLY STIMULATED DEPOLARISATION
Chapter 9 MECHANICAL rELAXATION
Chapter 10 MEASUREMENT AND PRESENTATION OF DATA
Chapter 11 THEORETICAL INTERPRETATIONS
Chapter 12 THE ENERGY CRITERION
Author Index
Subject Index

……